ZnSnN2: A New Earth-Abundant Element Semiconductor for Solar Cells
Dr. Steven Durbin
Electrical and Computer Engineering
There is considerable interest in earth-abundant element alternatives to conventional compound semiconductors, particularly for solar cells One candidate is ZnSnN2, which has only recently been demonstrated. Not only are Znand Sn "earth abundant," but approximately 1/3rd of the US domestic consumption comes directly from reclamation activity, so there is a strong environmental benefit to this material. The bandgap energy of ZnSnN2 - a semiconductor's fundamental parameter - is predicted to be 2.0 eV. Intriguingly, we have evidence that the actual bandgap is a strong function of the lattice ordering - obviating the need for traditional alloying approaches to application-specific bandgap tuning.
WMU ScholarWorks Citation
Makin, Robert, "ZnSnN2: A New Earth-Abundant Element Semiconductor for Solar Cells" (2015). Research and Creative Activities Poster Day. 164.
This poster was presented at the 2015 Western Michigan University Research and Creative Activities Poster Day. The poster and abstract are currently unavailable through ScholarWorks.