ZnSnN2: A New Earth-Abundant Element Semiconductor for Solar Cells
Dr. Steven Durbin
Electrical and Computer Engineering
There is considerable interest in earth-abundant element alternatives to conventional compound semiconductors, particularly for solar cells One candidate is ZnSnN2, which has only recently been demonstrated. Not only are Znand Sn "earth abundant," but approximately 1/3rd of the US domestic consumption comes directly from reclamation activity, so there is a strong environmental benefit to this material. The bandgap energy of ZnSnN2 - a semiconductor's fundamental parameter - is predicted to be 2.0 eV. Intriguingly, we have evidence that the actual bandgap is a strong function of the lattice ordering - obviating the need for traditional alloying approaches to application-specific bandgap tuning.
WMU ScholarWorks Citation
Makin, Robert, "ZnSnN2: A New Earth-Abundant Element Semiconductor for Solar Cells" (2015). Research and Creative Activities Poster Day. 164.