Date of Award

12-2005

Degree Name

Master of Science in Engineering

Department

Mechanical and Aeronautical Engineering

First Advisor

Dr. John Pattern

Second Advisor

Dr. Philip Guichelaar

Third Advisor

Dr. Pnina Ari-Gur

Access Setting

Masters Thesis-Open Access

Abstract

This thesis describes experimental work carried out to study the ability to ductile . single point diamond turn both polycrystal Silicon Carbide (SiC) and chemically vapor deposited (CVD) SiC. A Precitech diamond turning machine was used for ductile regime machining of polycrystal SiC at depths of 10 and 25 nm. The possibility of machining SiC in the ductile mode was substantiated by post process analysis of the chips collected during machining and the surface profiles. The force data obtained during machining was recorded and compared later with the different depth of cuts. An investigation into the ability to single point diamond turn (SPDT) CVD SiC with single crystal diamond tool was performed. Initial scratching experiments were performed to determine the ductile to brittle transition (DBT) depth for CVD SiC. Two different vendors of CVD SiC were used for the experiments (Poco Graphite Inc and Coors Tek Inc). The DBT depths for the Poco Graphite Inc. was found to be 550 nm and for the Coors Tek Inc 400 nm. Scratching experiments confirmed the existence of ductile mode in these materials which lead to SPDT experiments of CVD SiC to achieve surface roughness of less than 20 nm. These later tests were performed at actual depths of 200-300 nm and feed of a 1μm/ rev.

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