Date of Award
Master of Science in Engineering
Electrical and Computer Engineering
Dr. Steven Durbin
Dr. Ralph Tanner
Dr. Muralidhar Ghantasala
ZnSnN2, Molecular Beam Epitaxy (MBE), semiconductors, RHEED, othorhombic
Masters Thesis-Open Access
Semiconducting materials with a band gap around 1.5 eV are very much sought after due to their close match to the solar spectrum. However, some compounds that have shown promise for highly efficient solar cells contain rare, expensive, and sometimes toxic elements, such as indium and gallium. As such, a search for earth abundant materials has become more prominent recently. One such earth abundant semiconducting material that has garnered interest is ZnSnN2. It has been shown through previous studies that there is the possibility of continuously tuning the band gap between 1.0 and 2.0 eV by controlling the ordering of the cation sub lattice. In this work, ZnSnN2 is grown under varying growth conditions in an attempt to obtain a fully ordered cation sub lattice. The lattice structure is monitored in real time through in-situ RHEED measurements. After growth, the RHEED patterns are analyzed to extract structural data.
Durant, "Control of Cation Ordering in Zinc Tin Nitride and In-Situ Monitoring of Growth" (2015). Master's Theses. 655.